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BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 -- 2 February 2005 Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
s s s s High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1: VCBO VCEO IC Ptot hFE CCBS fT Quick reference data Conditions open emitter open base Tsp 145 C IC = 5 mA; VCE = 3 V; Tj = 25 C VCB = 5 V; f = 1 MHz; emitter grounded IC = 5 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C
[1]
Symbol Parameter collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain collector-base capacitance transition frequency
Min 60 -
Typ 100 0.17 14
Max 15 6 10 60 200 0.3 -
Unit V V mA mW
pF GHz
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
Quick reference data ...continued Conditions IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 s = opt; IC = 1 mA; VCE = 3 V; f = 2 GHz Min Typ 18 14 Max Unit dB dB maximum stable gain insertion power gain
Table 1: MSG |s21|2
Symbol Parameter
NF
noise figure
-
1
-
dB
[1]
Tsp is the temperature at the soldering point of the collector pin.
2. Pinning information
Table 2: Pin 1 2 3 4 Pinning Description collector emitter base emitter
2, 4 2 1
sym086
Simplified outline
3 4
Symbol
1 3
3. Ordering information
Table 3: Ordering information Package Name BFG310W/XR Description plastic surface mounted package; reverse pinning; 4 leads Version SOT343R Type number
4. Marking
Table 4: Marking codes Marking code [1] A7* Type number BFG310W/XR
[1] * = p: made in Hong Kong.
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
2 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature
Conditions open emitter open base open collector Tsp 145 C
[1]
Min -65 -
Max 15 6 2 10 60 +175 175
Unit V V V mA mW C C
Tsp is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6: Rth(j-sp)
[1]
Thermal characteristics Conditions Tsp 145 C
[1]
Symbol Parameter thermal resistance from junction to solder point
Typ 530
Unit K/W
Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7: Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter ICBO hFE CCBS CCES CEBS fT MSG |s21|2 collector-base cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance transition frequency maximum stable gain insertion power gain Conditions IE = 0 A; VCB = 6 V IC = 5 mA; VCE = 3 V VCB = 5 V; f = 1 MHz; emitter grounded VCE = 5 V; f = 1 MHz; base grounded VEB = 0.5 V; f = 1 MHz; collector grounded IC = 5 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; Tamb = 25 C; ZS = ZL = 50 f = 1.8 GHz f = 3 GHz NF PL(1dB) IP3 noise figure output power at 1 dB gain compression third order intercept point s = opt; IC = 1 mA; VCE = 3 V; f = 2 GHz IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 C; ZS = ZL = 50 14 11 1 1.8 8.5 dB dB dB dBm dBm Min 60 Typ 100 0.17 0.22 0.16 14 18 Max 15 200 0.3 pF pF pF GHz dB Unit nA
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
3 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
70 Ptot (mW) 60 50
001aac177
10 IC (mA) 8
001aac178
IB = 120 A 100 A 80 A
40 30 20
6 60 A 4 40 A 20 A
2 10 0 0 50 100 150 Tsp (C) 200 0 0 1 2 3
4
5 VCE (V)
6
Fig 1. Power derating curve
Fig 2. Collector current as a function of collector-emitter voltage; typical values
001aac179
0.20 CCBS (pF) 0.19
40 G (dB) 30 MSG
001aac180
0.18 20 0.17 10 0.16
s21 2
0.15 0 1 2 3 4 VCB (V) 5
0 10
102
103 f (MHz)
104
IC = 0 mA; f = 1 MHz.
IC = 5 mA; VCE = 3 V.
Fig 3. Collector-base capacitance as a function of collector-base voltage; typical values
Fig 4. Gain as a function of frequency; typical values
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
4 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 +0.2 0.4 0.2 180 0 0.2 3 GHz 0.5 1 2 5 40 MHz 10 0 0
+5
-0.2
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aac181
VCE = 3 V; IC = 5 mA; Zo = 50 .
Fig 5. Common emitter input reflection coefficient (s11); typical values
90
135
45
180
20
16
12 8 40 MHz
4
0
3 GHz 0
-135
-45
-90
001aac182
VCE = 3 V; IC = 5 mA.
Fig 6. Common emitter forward transmission coefficient (s21); typical values
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
5 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
90
135
45
3 GHz 180 0.5 0.4 0.3 0.2 0.1 0 40 MHz 0
-135
-45
-90
001aac183
VCE = 3 V; IC = 5 mA.
Fig 7. Common emitter reverse transmission coefficient (s12); typical values
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 +0.2 0.4 0.2 180 0 0.2 0.5 1 2 5 10 40 MHz 0 0
+5
-0.2 3 GHz
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aac184
VCE = 3 V; IC = 5 mA; Zo = 50 .
Fig 8. Common emitter output reflection coefficient (s22); typical values
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
6 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
8. Application information
Table 8: Sequence 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 SPICE parameters of the BFG310W DIE Parameter IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB RE RC CJE VJE MJE CJC VJC MJC XCJC FC TF XTF VTF ITF PTF TR KF AF TNOM EG XTB XTI Q1.AREA Value 16.17 210 1 50 59.83 1.726 2.114 6 1 2.3 10 0 1.5 3.6 2.1 1.6 115.6 866.3 0.285 68.18 601 0.123 1 0.7 8.3 10 1000 150 0 0 0 1 25 1.014 0 8 1 Unit aA V mA fA V A aA fF mV fF mV ps V mA deg ns C eV -
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
7 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
LC_lead
LC_wire CCB C_base_pad LB_lead LB_wire BJT1 C_emitter_pad CCE
CBE
CHIP LE_wire
LE_lead
001aac166
Fig 9. Package equivalent circuit of SOT343R Table 9: CCB CBE CCE C_base_pad C_emitter_pad LC_wire LB_wire LE_wire LC_lead LB_lead LE_lead List of components; see Figure 9 Value 2 80 80 67 142 0.767 0.842 0.212 0.28 0.281 0.1 Unit fF fF fF fF fF nH nH nH nH nH nH
Designation
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
8 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
9. Package outline
Plastic surface mounted package; reverse pinning; 4 leads SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
Fig 10. Package outline SOT343R
9397 750 14245 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
9 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
10. Revision history
Table 10: Revision history Release date 20050202 Data sheet status Product data sheet Change notice Doc. number 9397 750 14245 Supersedes Document ID BFG310W_XR_1
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
10 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
11. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14245
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 2 February 2005
11 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 February 2005 Document number: 9397 750 14245
Published in The Netherlands

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